No. |
Part Name |
Description |
Manufacturer |
151 |
MPXM2010D |
Sensor |
Motorola |
152 |
MPXM2010DT1 |
Sensor |
Motorola |
153 |
MPXM2010DT1 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS |
Motorola |
154 |
MPXM2010GS |
Sensor |
Motorola |
155 |
MPXM2010GS |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS |
Motorola |
156 |
MPXM2010GST1 |
Sensor |
Motorola |
157 |
MPXM2010GST1 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS |
Motorola |
158 |
NBM2011 |
100 KHz, 1M x 1 magnetic bubble memory device |
National Semiconductor |
159 |
OPM201 |
Miniature slotted photo intettupter. |
Optek Technology |
160 |
SGM2013 |
GaAs N-channel Dual-Gate MES FET |
SONY |
161 |
SGM2013N |
GaAs N-channel Dual-Gate MES FET |
SONY |
162 |
SGM2014 |
GaAs N-channel Dual Gate MES FET |
SONY |
163 |
SGM2014AM |
GaAs N-channel Dual Gate MES FET |
SONY |
164 |
SGM2014AN |
GaAs N-channel Dual Gate MES FET |
SONY |
165 |
SGM2014M |
GaAs N-channel Dual Gate MES FET |
SONY |
166 |
SGM2016 |
GaAs N-channel Dual-Gate MES FET |
SONY |
167 |
SGM2016AM |
GaAs N-channel Dual-Gate MES FET |
SONY |
168 |
SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
169 |
SGM2016AN |
GaAs N-channel Dual-Gate MES FET |
SONY |
170 |
SGM2016AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
171 |
SGM2016M |
GaAs N-channel Dual-Gate MES FET |
SONY |
172 |
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET |
SONY |
173 |
SGM2016P |
GaAs N-channel Dual-Gate MES FET |
SONY |
174 |
SJM201BEC |
Order Part Number - Analog Switch |
Siliconix |
175 |
SRM2017C |
CMOS 16K Bit Static RAM |
Epson Company |
176 |
SSM2013 |
Voltage-Controlled Amplifier |
Precision Monolithics |
177 |
SSM2013 |
Voltage controlled amplifier |
Solid State Micro Technology |
178 |
SSM2013P |
Voltage-Controlled Amplifier |
Precision Monolithics |
179 |
SSM2014 |
Voltage-Controlled Amplifier/OVCE |
Precision Monolithics |
180 |
SSM2014P |
Voltage-Controlled Amplifier/OVCE |
Precision Monolithics |
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