| No. |
Part Name |
Description |
Manufacturer |
| 151 |
OM5002ST |
100V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 152 |
OM5002ST |
15Amp ultra-fast rectifier |
Omnirel |
| 153 |
OM5003ST |
150V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 154 |
OM5003ST |
15Amp ultra-fast rectifier |
Omnirel |
| 155 |
OM5004ST |
200V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 156 |
OM5004ST |
15Amp ultra-fast rectifier |
Omnirel |
| 157 |
OM5005ST |
300V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 158 |
OM5005ST |
15Amp ultra-fast rectifier |
Omnirel |
| 159 |
OM5006ST |
400V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 160 |
OM5006ST |
15Amp ultra-fast rectifier |
Omnirel |
| 161 |
OM5007ST |
600V 15A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 162 |
OM5007ST |
15Amp ultra-fast rectifier |
Omnirel |
| 163 |
OM5008ST |
400V 14A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 164 |
OM5008ST |
14Amp high efficiency, soft recovery rectifier |
Omnirel |
| 165 |
OM5009ST |
600V 14A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package |
International Rectifier |
| 166 |
OM5009ST |
14Amp high efficiency, soft recovery rectifier |
Omnirel |
| 167 |
QM500 |
HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 168 |
QM500HA-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 169 |
RM500DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 170 |
RM500DZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 171 |
RM500DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 172 |
RM500DZ-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 173 |
RM500DZ-H |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 174 |
RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 175 |
RM500DZ-M |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 176 |
RM500HA-24 |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 177 |
RM500HA-2H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 178 |
RM500HA-H |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 179 |
RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 180 |
RM500UZ-24 |
MITSUBISHI DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| | | |
