| No. |
Part Name |
Description |
Manufacturer |
| 151 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 152 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 153 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 154 |
3T064A |
58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 155 |
3T064B |
58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 156 |
3T072A |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 157 |
3T072B |
65V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 158 |
3T080A |
75V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 159 |
3T080B |
75V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 160 |
3T110A |
90V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 161 |
3T110B |
90V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 162 |
3T130A |
120V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 163 |
3T130B |
120V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 164 |
3T150A |
140V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 165 |
3T150B |
140V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 166 |
3T180A |
160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 167 |
3T180B |
160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 168 |
3T230A |
190V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 169 |
3T230B |
190V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 170 |
3T260A |
220V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 171 |
3T260B |
220V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 172 |
3T310A |
275V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 173 |
3T310B |
275V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 174 |
3T350A |
300V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 175 |
3T350B |
300V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
MDE Semiconductor |
| 176 |
5KP100 |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 177 |
5KP100A |
100.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 178 |
5KP110 |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 179 |
5KP110A |
110.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 180 |
5KP120 |
120.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| | | |
