| No. |
Part Name |
Description |
Manufacturer |
| 151 |
NEZ7177-4DD |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 152 |
NEZ7177-8D |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 153 |
NEZ7177-8DD |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 154 |
NEZ7785-15D |
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 155 |
NEZ7785-4D |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 156 |
NEZ7785-4DD |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 157 |
NEZ7785-8D |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 158 |
NEZ7785-8DD |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 159 |
Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
Siemens |
| 160 |
Q62702-A920 |
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
Siemens |
| 161 |
Q62702-A921 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
Siemens |
| 162 |
Q62702-A922 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 163 |
Q62702-F1215 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 164 |
SAA1080 |
IC for color television intelligence games with wireless remote control |
ITT Semiconductors |
| 165 |
SGF32 |
N CHANNEL GAASMES TRANSISTOR |
SANYO |
| 166 |
SGM2013 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 167 |
SGM2013N |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 168 |
SGM2014 |
GaAs N-channel Dual Gate MES FET |
SONY |
| 169 |
SGM2014AM |
GaAs N-channel Dual Gate MES FET |
SONY |
| 170 |
SGM2014AN |
GaAs N-channel Dual Gate MES FET |
SONY |
| 171 |
SGM2014M |
GaAs N-channel Dual Gate MES FET |
SONY |
| 172 |
SGM2016 |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 173 |
SGM2016AM |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 174 |
SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 175 |
SGM2016AN |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 176 |
SGM2016AP |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 177 |
SGM2016M |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 178 |
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 179 |
SGM2016P |
GaAs N-channel Dual-Gate MES FET |
SONY |
| 180 |
SM5813 |
EIGHT-TIMES OVERSAMPLING DIGITAL FILTER FOR DIGITAL AUDIO |
Nippon Precision Circuits Inc |
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