No. |
Part Name |
Description |
Manufacturer |
151 |
Q62702-F1487 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
152 |
Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
153 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
154 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
155 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
156 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
157 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
158 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
159 |
Q62702-F1771 |
Silicon N Channel MOSFET Tetrode |
Siemens |
160 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
161 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
162 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
163 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
164 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
165 |
Q62702-F35 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
166 |
Q62702-F936 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
167 |
SI1022R |
N-Channel Enhancement-Mode MOSFET Transistor |
Vishay |
168 |
STD9N10-1 |
N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR |
ST Microelectronics |
169 |
STF10NM65N |
N-channel 650 V, 0.43 Ω, 9 A MDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK |
ST Microelectronics |
170 |
STF12N65M5 |
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh(TM) V Power MOSFET TO-220FP |
ST Microelectronics |
171 |
STF14NM65N |
N-channel 650 V, 0.33 Ohm, 12 A MDmesh(TM) II Power MOSFET TO-220FP |
ST Microelectronics |
172 |
STF24NM60N |
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP |
ST Microelectronics |
173 |
STF30N65M5 |
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220FP |
ST Microelectronics |
174 |
STF3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET TO-220FP |
ST Microelectronics |
175 |
STF8NM60ND |
N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK |
ST Microelectronics |
176 |
STP11NM60ND |
N-channel 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET TO-220 |
ST Microelectronics |
177 |
STP12N65M5 |
N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh(TM) V Power MOSFET TO-220 |
ST Microelectronics |
178 |
STP24NM60N |
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220 |
ST Microelectronics |
179 |
STP30N65M5 |
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220 |
ST Microelectronics |
180 |
STP3LN62K3 |
N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET TO-220 |
ST Microelectronics |
| | | |