No. |
Part Name |
Description |
Manufacturer |
151 |
M470T6554BGZ0-CD5/CC |
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
Samsung Electronic |
152 |
M470T6554BGZ3-CD5/CC |
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
Samsung Electronic |
153 |
M470T6554BZ0-LD5/CC |
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
Samsung Electronic |
154 |
M470T6554BZ3-LD5/CC |
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC |
Samsung Electronic |
155 |
M470T6554CZ0-CCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
156 |
M470T6554CZ0-CD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
157 |
M470T6554CZ0-CE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
158 |
M470T6554CZ0-CE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
159 |
M470T6554CZ0-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
160 |
M470T6554CZ0-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
161 |
M470T6554CZ0-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
162 |
M470T6554CZ0-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
163 |
M470T6554CZ3-CCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
164 |
M470T6554CZ3-CD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
165 |
M470T6554CZ3-CE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
166 |
M470T6554CZ3-CE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
167 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
168 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
169 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
170 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
171 |
MAX4074BKESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 50V/V, noninverting gain 51V/V, -3dB BW 82kHZ. |
MAXIM - Dallas Semiconductor |
172 |
MAX4074BKEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 50V/V, noniverting gain 51V/V, -3dB BW 82kHZ. |
MAXIM - Dallas Semiconductor |
173 |
MAX4075BKESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 50V/V, noninverting gain 51V/V, -3dB BW 82kHz. |
MAXIM - Dallas Semiconductor |
174 |
MAX4075BKEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 50V/V, noninverting gain 51V/V, -3dB BW 82kHZ. |
MAXIM - Dallas Semiconductor |
175 |
MAX4174BKEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
176 |
MAX4175BKEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
177 |
MAX4274BKESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
178 |
MAX4274BKEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
179 |
MAX4275BKESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
180 |
MAX4275BKEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 50, 1+ (Rf/Dg) noninverting gain 51, -3dB BW 330kHz. |
MAXIM - Dallas Semiconductor |
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