| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 152 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 153 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 154 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 155 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 156 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 157 |
2SA537AH |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 158 |
2SA537H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching applications |
Hitachi Semiconductor |
| 159 |
2SA548H |
Silicon PNP Epitaxial Planar Transistor, intended for use in Medium Speed Switching, RF Amplifier |
Hitachi Semiconductor |
| 160 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 161 |
2SB679 |
Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 |
TOSHIBA |
| 162 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 163 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 164 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 165 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 166 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 167 |
2SC2740 |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 168 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 169 |
2SC2831 |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 170 |
2SC2831A |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 171 |
2SC2832 |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 172 |
2SC2832A |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 173 |
2SC2833 |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 174 |
2SC2833A |
Si NPN Triple Diffused Junction Mesa |
Unknow |
| 175 |
2SC2834 |
Silicon NPN Triple-Diffused Junction Mesa Type |
Unknow |
| 176 |
2SC2834A |
Silicon NPN Triple-Diffused Junction Mesa Type |
Unknow |
| 177 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 178 |
2SC2952 |
NPN medium power microwave transistor (This datasheet of NE24615 is also the datasheet of 2SC2952, see the Electrical Characteristics table) |
NEC |
| 179 |
2SC3210 |
Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type |
Panasonic |
| 180 |
2SC3210 |
Silicon NPN Triple-Diffused Junction Mesa Type |
Unknow |
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