No. |
Part Name |
Description |
Manufacturer |
151 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
152 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
153 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
154 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
155 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
156 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
157 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
158 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
159 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
160 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
161 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
162 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
163 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
164 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
165 |
2N6544 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
166 |
2N6545 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
167 |
2N6546 |
10A power-switching N-P-N transistor. |
General Electric Solid State |
168 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
169 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
170 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
171 |
2N6671 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
172 |
2N6672 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
173 |
2N6673 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
174 |
2N6676 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
175 |
2N6677 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
176 |
2N6678 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
177 |
2N6686 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
178 |
2N6687 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
179 |
2N6688 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
180 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
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