| No. |
Part Name |
Description |
Manufacturer |
| 151 |
PRN111246800J |
Bussed resistor network |
California Micro Devices Corp |
| 152 |
PTN1111 |
1:10 PECL clock distribution device |
Philips |
| 153 |
PTN1111BD |
1:10 PECL clock distribution device |
Philips |
| 154 |
R3111N111A-TR |
Low voltage detector. Detector threshold (-Vdet) 1.1V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
| 155 |
R3111N111C-TR |
Low voltage detector. Detector threshold (-Vdet) 1.1V. Output type: CMOS. Standard taping specification TR |
Ricoh |
| 156 |
R5421N111C |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 157 |
R5421N111C-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 158 |
R5422N111C |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 159 |
R5422N111C-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 160 |
R5422N111E |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 161 |
R5422N111E-TR |
Li-lon BATTERY PROTECTOR |
Ricoh |
| 162 |
RN1110 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 163 |
RN1110CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 164 |
RN1110F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 165 |
RN1110FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 166 |
RN1110MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 167 |
RN1111 |
BUSSED RESISTOR NETWORK |
California Micro Devices Corp |
| 168 |
RN1111 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 169 |
RN1111CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 170 |
RN1111F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 171 |
RN1111FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 172 |
RN1111MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 173 |
RN1112 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 174 |
RN1112ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 175 |
RN1112CT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 176 |
RN1112F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 177 |
RN1112FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 178 |
RN1112MFV |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| 179 |
RN1113 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 180 |
RN1113ACT |
Bias resistor built-in transistor (BRT) |
TOSHIBA |
| | | |
