| No. |
Part Name |
Description |
Manufacturer |
| 151 |
JANTXV1N5610 |
Transient Voltage Suppressor |
Microsemi |
| 152 |
JANTXV1N5611 |
Transient Voltage Suppressor |
Microsemi |
| 153 |
JANTXV1N5612 |
Transient Voltage Suppressor |
Microsemi |
| 154 |
JANTXV1N5613 |
Transient Voltage Suppressor |
Microsemi |
| 155 |
JANTXV1N5614 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 156 |
JANTXV1N5614US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 157 |
JANTXV1N5615 |
Fast Rectifier (100-500ns) |
Microsemi |
| 158 |
JANTXV1N5615US |
Fast Rectifier (100-500ns) |
Microsemi |
| 159 |
JANTXV1N5616 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 160 |
JANTXV1N5616US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 161 |
JANTXV1N5617 |
Fast Rectifier (100-500ns) |
Microsemi |
| 162 |
JANTXV1N5617US |
Fast Rectifier (100-500ns) |
Microsemi |
| 163 |
JANTXV1N5618 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 164 |
JANTXV1N5618US |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 165 |
JANTXV1N5619 |
Fast Rectifier (100-500ns) |
Microsemi |
| 166 |
JANTXV1N5619US |
Fast Rectifier (100-500ns) |
Microsemi |
| 167 |
K4N56163QF |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 168 |
K4N56163QF-GC |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 169 |
K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 170 |
K4N56163QF-GC30 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 171 |
K4N56163QF-GC37 |
256Mbit gDDR2 SDRAM |
Samsung Electronic |
| 172 |
R1120N561A-TL |
Low noise 150mA LDO regulator. Output voltage 5.6V. L active type. Taping specification TL. |
Ricoh |
| 173 |
R1120N561B-TL |
Low noise 150mA LDO regulator. Output voltage 5.6V. H active type. Taping specification TL. |
Ricoh |
| 174 |
R1210N561C-TL |
PWM step-up DC/DC converter. Output voltage 5.6V. Oscillator frequency 100kHz without a frequency change-over cicuit. Taping specification TL |
Ricoh |
| 175 |
R1210N561C-TR |
PWM step-up DC/DC converter. Output voltage 5.6V. Oscillator frequency 100kHz without a frequency change-over cicuit. Standard taping specification TR |
Ricoh |
| 176 |
R1210N561D-TL |
PWM step-up DC/DC converter. Output voltage 5.6V. Oscillator frequency 180kHz without a frequency change-over cicuit. Taping specification TL |
Ricoh |
| 177 |
R1210N561D-TR |
PWM step-up DC/DC converter. Output voltage 5.6V. Oscillator frequency 180kHz without a frequency change-over cicuit. Standard taping specification TR |
Ricoh |
| 178 |
R3111N561A-TR |
Low voltage detector. Detector threshold (-Vdet) 5.6V. Output type: Nch open drain. Standard taping specification TR |
Ricoh |
| 179 |
R3111N561C-TR |
Low voltage detector. Detector threshold (-Vdet) 5.6V. Output type: CMOS. Standard taping specification TR |
Ricoh |
| 180 |
SF_2N5617 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
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