| No. |
Part Name |
Description |
Manufacturer |
| 151 |
41010 |
470MHz 9V Silicon NPN Overlay Transistor for Low Voltage handheld UHF broadband amplifier service |
RCA Solid State |
| 152 |
ABI-04C |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 153 |
ABI-04T |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 154 |
ABI-09 |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 155 |
ABI-2 |
Small Signal Narrow Band Amplifier |
CCSIT-CE |
| 156 |
ABL02 |
Small Signal Wideband Amplifier |
CCSIT-CE |
| 157 |
APPLICATION-NOTE |
7,5 - Broadband amplifier 1.5W - 20dB - 400-512MHz |
TRW |
| 158 |
APPLICATION-NOTE |
470-860 MHz Broadband amplifier 5W |
TRW |
| 159 |
APPLICATION-NOTE |
1.2V, 40-900 MHz Broadband amplifier with the TP3400 transistor |
TRW |
| 160 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 161 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 162 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 163 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 164 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 165 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 166 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 167 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 168 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 169 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 170 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 171 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 172 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 173 |
BC327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 174 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 175 |
BC328 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 176 |
BC328 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 177 |
BC337 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 178 |
BC337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 179 |
BC338 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 180 |
BC338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
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