No. |
Part Name |
Description |
Manufacturer |
151 |
BA7765AS |
NORMAL AUDIO SIGNAL PROCESSINGS |
ROHM |
152 |
BA7766AS |
NORMAL AUDIO SIGNAL PROCESSINGS |
ROHM |
153 |
BA7767AS |
NORMAL AUDIO SIGNAL PROCESSINGS |
ROHM |
154 |
BAY41 |
Silicon planar switching diode |
TUNGSRAM |
155 |
BAY42 |
Silicon planar switching diode |
TUNGSRAM |
156 |
BAY43 |
Silicon planar switching diode |
TUNGSRAM |
157 |
BC107 |
Epitaxial NPN silicon transistor in planar technology |
TUNGSRAM |
158 |
BC108 |
Epitaxial NPN silicon transistor in planar technology |
TUNGSRAM |
159 |
BC109 |
Epitaxial NPN silicon transistor in planar technology |
TUNGSRAM |
160 |
BD65B60GWL |
Max. 28.5V Output 2Strings (25mA/ch) White LED Driver |
ROHM |
161 |
BD65B60GWL-E2 |
Max. 28.5V Output 2Strings (25mA/ch) White LED Driver |
ROHM |
162 |
BF177 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
163 |
BF178 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
164 |
BF184 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
165 |
BF185 |
Epitaxial NPN silicon RF transistor in planar technology |
TUNGSRAM |
166 |
BFY33 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
167 |
BFY34 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
168 |
BFY46 |
Double-diffused NPN silicon RF Transistor in planar technology |
TUNGSRAM |
169 |
BSY34 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
170 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
171 |
BUZ14 |
main ratings |
Siemens |
172 |
BUZ17 |
main ratings |
Siemens |
173 |
BUZ18 |
main ratings |
Siemens |
174 |
BUZ201 |
main ratings |
Siemens |
175 |
BUZ202 |
MAIN RATINGS |
Siemens |
176 |
BUZ206 |
main ratings |
Siemens |
177 |
BUZ213 |
main ratings |
Siemens |
178 |
BUZ214 |
main ratings |
Siemens |
179 |
BUZ216 |
main ratings |
Siemens |
180 |
BUZ220 |
main ratings |
Siemens |
| | | |