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Datasheets for NIT

Datasheets found :: 15060
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No. Part Name Description Manufacturer
151 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
152 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
153 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
154 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
155 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
156 2SC5793 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
157 2SC5811 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications SANYO
158 2SD1088 Silicon NPN triple diffused darlington high voltage power transistor, igniter applications TOSHIBA
159 2SD1360 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications TOSHIBA
160 2SD1361 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications TOSHIBA
161 2SD1409A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS TOSHIBA
162 2SD1410 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. TOSHIBA
163 2SD1410A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. TOSHIBA
164 2SD5041 Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. USHA India LTD
165 3627 High Accuracy Unity-Gain Differential Amplifier Burr Brown
166 3627AM High Accuracy Unity-Gain Differential Amplifier Burr Brown
167 3627BM High Accuracy Unity-Gain Differential Amplifier Burr Brown
168 3N140 N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor Motorola
169 3N155 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
170 3N155A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
171 3N156 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
172 3N156A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
173 3N157 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
174 3N157A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
175 3N158 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
176 3N158A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor Motorola
177 4063BF 4-BIT Magnitude comparator TOSHIBA
178 4063BP 4-BIT Magnitude comparator TOSHIBA
179 40654 Silicon ALL-DIFFUSED SCRs, typical application - capacitor discharge ignition systems SGS-ATES
180 40655 Silicon ALL-DIFFUSED SCRs, typical application - capacitor discharge ignition systems SGS-ATES


Datasheets found :: 15060
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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