| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SC5683 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 152 |
2SC5689 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 153 |
2SC5690 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 154 |
2SC5793 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 155 |
2SC5811 |
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications |
SANYO |
| 156 |
2SD1088 |
Silicon NPN triple diffused darlington high voltage power transistor, igniter applications |
TOSHIBA |
| 157 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 158 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
| 159 |
2SD1409A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 160 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
| 161 |
2SD1410A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. |
TOSHIBA |
| 162 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 163 |
3627 |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
| 164 |
3627AM |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
| 165 |
3627BM |
High Accuracy Unity-Gain Differential Amplifier |
Burr Brown |
| 166 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 167 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 168 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 169 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 170 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 171 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 172 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 173 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 174 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 175 |
40654 |
Silicon ALL-DIFFUSED SCRs, typical application - capacitor discharge ignition systems |
SGS-ATES |
| 176 |
40655 |
Silicon ALL-DIFFUSED SCRs, typical application - capacitor discharge ignition systems |
SGS-ATES |
| 177 |
40833 |
Silicon ALL-DIFFUSED SCRs, typical application - capacitor discharge ignition systems |
SGS-ATES |
| 178 |
420E212 |
12V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 179 |
420E225 |
25V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 180 |
420E228 |
28V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
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