| No. |
Part Name |
Description |
Manufacturer |
| 151 |
24FC32 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 Instead |
Microchip |
| 152 |
24FC65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 |
Microchip |
| 153 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
| 154 |
24LC09-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 155 |
24LC09-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 156 |
24LC09T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 157 |
24LC21 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 is a 128 x 8-bit Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of toda |
Microchip |
| 158 |
24LC21-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 159 |
24LC21-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 160 |
24LC21/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 161 |
24LC21/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 162 |
24LC21T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 163 |
24LC21T/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 164 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
| 165 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 166 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 167 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 168 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 169 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 170 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 171 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 172 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 173 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 174 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 175 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 176 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 177 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 178 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 179 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 180 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
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