| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1P646 |
Silicon miniature rectifier |
ITT Industries |
| 152 |
1P647 |
Silicon miniature rectifier |
ITT Industries |
| 153 |
1P649 |
Silicon miniature rectifier |
ITT Industries |
| 154 |
1SS101 |
Silicon Mixer Diode |
NEC |
| 155 |
1SS97 |
Silicon Mixer Diode |
NEC |
| 156 |
1SS98 |
Silicon Mixer Diode |
NEC |
| 157 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 158 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 159 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 160 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 161 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 162 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 163 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 164 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 165 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 166 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 167 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 168 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 169 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 170 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 171 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 172 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 173 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 174 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 175 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 176 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 177 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 178 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 179 |
27128 |
NMOS 128K 16K x 8 UV EPROM |
SGS Thomson Microelectronics |
| 180 |
27C1024 |
1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
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