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Datasheets for ON MI

Datasheets found :: 29655
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No. Part Name Description Manufacturer
151 1P646 Silicon miniature rectifier ITT Industries
152 1P647 Silicon miniature rectifier ITT Industries
153 1P649 Silicon miniature rectifier ITT Industries
154 1SS101 Silicon Mixer Diode NEC
155 1SS97 Silicon Mixer Diode NEC
156 1SS98 Silicon Mixer Diode NEC
157 2001 2GHz 1W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
158 2003 2GHz 3W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
159 2005 2GHz 5W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
160 2010 2GHz 10W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
161 2023-1 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
162 2023-16 2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
163 2023-3 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
164 2023-6 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
165 2023-6 2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
166 20L08 2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
167 20L15 2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
168 2100 2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
169 2223-10 2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
170 2223-14 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
171 2223-18 2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
172 2223-3 2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
173 2301 2.3GHz 1W 22V microwave power transistor for class C applications SGS Thomson Microelectronics
174 2304 2.3GHz 4W 20V microwave power transistor for class C applications SGS Thomson Microelectronics
175 2327-1 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
176 2327-15 2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications SGS Thomson Microelectronics
177 2327-3 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
178 2327-5 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
179 27128 NMOS 128K 16K x 8 UV EPROM SGS Thomson Microelectronics
180 27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM SGS Thomson Microelectronics


Datasheets found :: 29655
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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