No. |
Part Name |
Description |
Manufacturer |
151 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
152 |
2N6285 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
153 |
2N6286 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
154 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
155 |
2N6287 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
156 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
157 |
2N6295 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
SemeLAB |
158 |
2N6298 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
159 |
2N6299 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
160 |
2N6300 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
161 |
2N6301 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
162 |
2N6354 |
Silicon power transistor |
SGS-ATES |
163 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
164 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
165 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
166 |
2N6386 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
167 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
168 |
2N6387 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
169 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
170 |
2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS |
ON Semiconductor |
171 |
2N6388 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
172 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
173 |
2N6487 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
174 |
2N6487 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
175 |
2N6487 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
176 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
177 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
178 |
2N6488 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
ST Microelectronics |
179 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
180 |
2N6490 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
SGS Thomson Microelectronics |
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