No. |
Part Name |
Description |
Manufacturer |
151 |
GM-200B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
152 |
GM-200P-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
153 |
GM-200P-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
154 |
GM-233B-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
155 |
GM-233B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
156 |
GM-233P-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
157 |
GM-233P-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
158 |
GXM |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
159 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
160 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
161 |
HYB314175BJ-50 |
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
162 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
163 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
164 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
165 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
166 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
167 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
168 |
IP4769CZ14 |
VGA interface ESD protection with integratedtermination resistors |
NXP Semiconductors |
169 |
IRDC3038 |
Reference design kit featuring 14-pin synchronous PWM controller for DDR memory application with the voltage tracking capability |
International Rectifier |
170 |
IRPLMB1E |
Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin |
International Rectifier |
171 |
ISD5116 |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
172 |
ISD5116E |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
173 |
ISD5116ED |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
174 |
ISD5116EI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
175 |
ISD5116P |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
176 |
ISD5116S |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
177 |
ISD5116SD |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
178 |
ISD5116SI |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
179 |
ISD5116X |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
180 |
L7203 |
SMOOTH DRIVE SPINDLE MOTOR FOR OPTICAL DRIVE APPLICATION WITH POWER INTEGRATED |
SGS Thomson Microelectronics |
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