| No. |
Part Name |
Description |
Manufacturer |
| 151 |
SA110 |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 152 |
SA110(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 153 |
SA110A |
110.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 154 |
SA12(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 155 |
SA120 |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 156 |
SA120(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 157 |
SA120A |
120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 158 |
SA13(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 159 |
SA130 |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 160 |
SA130(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 161 |
SA130A |
130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 162 |
SA14(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 163 |
SA15(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 164 |
SA150 |
150.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 165 |
SA150(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 166 |
SA150A |
150.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 167 |
SA16(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 168 |
SA160 |
160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 169 |
SA160(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 170 |
SA160A |
160.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 171 |
SA17(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 172 |
SA170 |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 173 |
SA170(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 174 |
SA170A |
170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 175 |
SA18(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 176 |
SA180 |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 177 |
SA180A |
180.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 178 |
SA20(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 179 |
SA22(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| 180 |
SA24(C)A |
DEVICES FOR BIPOLAR APPLICATIONS |
Fairchild Semiconductor |
| | | |
