No. |
Part Name |
Description |
Manufacturer |
151 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
152 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
153 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
154 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
155 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
156 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
157 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
158 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
159 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
160 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
161 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
162 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
163 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
164 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
165 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
166 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
167 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
168 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
169 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
170 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
171 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
172 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
173 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
174 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
175 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
176 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
177 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
178 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
179 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
180 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
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