| No. |
Part Name |
Description |
Manufacturer |
| 151 |
KBPC606 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
| 152 |
KBPC608 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
| 153 |
KBPC610 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
| 154 |
KBPC8005 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 155 |
KBPC801 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 156 |
KBPC802 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 157 |
KBPC804 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 158 |
KBPC806 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 159 |
KBPC808 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 800 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 160 |
KBPC810 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 1000 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
| 161 |
LM5000-3MTCEP |
V(in): -0.3 to +40V; enhanced plastic high voltage switch mode regulator. For flyback regulator, forward regulator, boost regulator, distributed power converters, selected military and avionics applications |
National Semiconductor |
| 162 |
MB252 |
Single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward rectified output current 25A at Tc=55degC. |
Rectron Semiconductor |
| 163 |
NTE5814 |
6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max average forward rectified current 6A. |
NTE Electronics |
| 164 |
NTE5815 |
6 Amp. Plastic silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max average forward rectified current 6A. |
NTE Electronics |
| 165 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 166 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 167 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 168 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 169 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 170 |
Q62702-A1211 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 171 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 172 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 173 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 174 |
Q62702-A787 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 175 |
Q62702-A938 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 176 |
Q62702-A940 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 177 |
Q62702-A942 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 178 |
SB160S |
Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 0.375inches lead length at Ta = 75degC 1.0 A. |
Panjit International Inc |
| 179 |
SB660F |
Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 6 A. |
Panjit International Inc |
| 180 |
SB860CT |
Schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 100degC 8 A. |
Panjit International Inc |
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