No. |
Part Name |
Description |
Manufacturer |
151 |
EDS2516APTA-75TI |
256M bits SDRAM WTR (Wide Temperature Range) |
Elpida Memory |
152 |
EDS2516APTA-7A |
256M bits SDRAM |
Elpida Memory |
153 |
EDS2516APTA-7AL |
256M bits SDRAM |
Elpida Memory |
154 |
EDS2516APTA-7ATI |
256M bits SDRAM WTR (Wide Temperature Range) |
Elpida Memory |
155 |
EDS2516APTA-TI |
256M bits SDRAM WTR (Wide Temperature Range) |
Elpida Memory |
156 |
ERL |
Military/Established Reliability, MIL-PRF-39017 Qualified, Type RLR, Verified Failure Rate, Excellent High Frequency Performance, Epoxy Coating Provides Superior Moisture Protection, Monthly Lot Acceptance Testing, Very Low Noise |
Vishay |
157 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
158 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
159 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
160 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
161 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
162 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
163 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
164 |
HFBR-5103A |
HFBR-5103A · 125 MBd ATM and Fast Ethernet Transceiver in Low Cost 1x9 Package: Extended Temp., SC Receptacle |
Agilent (Hewlett-Packard) |
165 |
HFBR-5103AT |
HFBR-5103AT · 125 MBd ATM and Fast Ethernet Transceiver in Low Cost 1x9 Package: Extended Temp., ST Receptacle |
Agilent (Hewlett-Packard) |
166 |
HFBR-5103P |
HFBR-5103P · 125 MBd ATM and Fast Ethernet Transceiver in Low Cost 1x9 Package: Mezzanine Height, SC Receptacle |
Agilent (Hewlett-Packard) |
167 |
KSA1174PTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
168 |
KSA992PTA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
169 |
KSC1845PTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
170 |
KSD5041PTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
171 |
L7551-21 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
172 |
L7551-22 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
173 |
L7551-23 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
174 |
L7551-32 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
175 |
L7551-44 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
176 |
L8231 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
177 |
L8231-21 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
178 |
L8231-22 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
179 |
L8231-23 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
180 |
L8231-32 |
Receptacle type, 1.3 ��m, 1.25, 2.5 Gbps |
Hamamatsu Corporation |
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