| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5551 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 152 |
1N5552 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 153 |
1N5554 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 154 |
1N5623 |
Leaded Rectifier Fast Recovery |
Central Semiconductor |
| 155 |
1N5812 |
50 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 156 |
1N5814 |
100 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 157 |
1N5816 |
150 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 158 |
1N60 |
Germanium Point Contact for FM detector |
Hitachi Semiconductor |
| 159 |
1N76 |
Silicon Diode - Microwave X-band Detector f=9,375 MHz, Vo=5.0mV to 16mV |
Motorola |
| 160 |
1N76A |
Silicon Diode - Microwave X-band Detector f=9,375 MHz, Vo=5.0mV to 16mV |
Motorola |
| 161 |
1NU41 |
SUPER FAST RECOVERY RECTIFIER |
TOSHIBA |
| 162 |
1R5DU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 163 |
1R5GU41 |
DUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 164 |
1R5NU41 |
SUPER FAST RECOVERY RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATIONS |
TOSHIBA |
| 165 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 166 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 167 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 168 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 169 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 170 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 171 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 172 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 173 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 174 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 175 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 176 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 177 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 178 |
1SV160 |
Variable Capacitance Diode AFC Application for FM Receiver |
TOSHIBA |
| 179 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
| 180 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
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