| No. |
Part Name |
Description |
Manufacturer |
| 151 |
3EZ75 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 152 |
3EZ8.2 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 153 |
3EZ82 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 154 |
3EZ9.1 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 155 |
3EZ91 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
| 156 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 157 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 158 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 159 |
3N170 |
N-CHANNEL MOSFET ENHANCEMENT MODE |
Linear Technology |
| 160 |
3N171 |
N-CHANNEL MOSFET ENHANCEMENT MODE |
Linear Technology |
| 161 |
4CX1500B |
RADIAL BEAM POWER TETRODE |
Eimac |
| 162 |
4CX5000A |
VHF POWER TETRODES |
Eimac |
| 163 |
4CX5000R |
VHF POWER TETRODES |
Eimac |
| 164 |
4X150A |
RADIAL BEAM POWER TETRODE |
Eimac |
| 165 |
4X150D |
RADIAL BEAM POWER TETRODE |
Eimac |
| 166 |
5962-1422801VXC |
Radiation Hardened 3Amp Sink/Source DDR Termination Regulator w/ Built-in VREF 16-CFP -55 to 125 |
Texas Instruments |
| 167 |
5962R1422801VXC |
Radiation Hardened 3Amp Sink/Source DDR Termination Regulator w/ Built-in VREF 16-CFP -55 to 125 |
Texas Instruments |
| 168 |
7912 |
Integrated Circuits |
Semiconductor Technology |
| 169 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 170 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 171 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 172 |
A840 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (VERTICAL DEFLECTION OUTPUT CIRCUIT FOR COLOR TELEVISION) |
Korea Electronics (KEC) |
| 173 |
ABBREVIATIONS |
Explanation of abbreviations used for TESLA germanium transistors from Germaniovych tranzistoru konstrukcni katalog 1971 |
Tesla Elektronicke |
| 174 |
ABT15S20BCT |
HIGH VOLTAGE SCHOTTKY DIODE |
Advanced Power Technology |
| 175 |
ACE9020B |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
| 176 |
ACE9020KG |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
| 177 |
ACE9020NP1S |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
| 178 |
ACE9030FP1N |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
| 179 |
ACE9030FP1Q |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
| 180 |
ACE9030FP2N |
3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems |
Mitel Semiconductor |
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