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Datasheets for RF2

Datasheets found :: 1294
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 IRF222 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
152 IRF222 Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
153 IRF222 N-CHANNEL POWER MOSFETS Samsung Electronic
154 IRF223 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
155 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
156 IRF223 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
157 IRF223 Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
158 IRF223 N-CHANNEL POWER MOSFETS Samsung Electronic
159 IRF224 (IRF225) HEXFET Transistors International Rectifier
160 IRF224 (IRF225) HEXFET Transistors International Rectifier
161 IRF230 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
162 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
163 IRF230 200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
164 IRF230 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
165 IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
166 IRF230 N-CHANNEL POWER MOSFETS Samsung Electronic
167 IRF230 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET SemeLAB
168 IRF230 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
169 IRF230-233 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
170 IRF230N Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
171 IRF231 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
172 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
173 IRF231 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
174 IRF231 Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
175 IRF231 N-CHANNEL POWER MOSFETS Samsung Electronic
176 IRF231 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix
177 IRF231R Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
178 IRF232 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
179 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
180 IRF232 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil


Datasheets found :: 1294
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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