| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 152 |
IRF611 |
N-Channel Power MOSFET |
Samsung Electronic |
| 153 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 154 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 155 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 156 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 157 |
IRF612 |
N-Channel Power MOSFET |
Samsung Electronic |
| 158 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 159 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 160 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 161 |
IRF613 |
Trans MOSFET N-CH 150V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 162 |
IRF613 |
N-Channel Power MOSFET |
Samsung Electronic |
| 163 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 164 |
IRF614 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 165 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 166 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 167 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 168 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 169 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 170 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 171 |
IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 172 |
IRF6150 |
-20V Dual P-Channel HEXFET Power MOSFET in a 16-Lead FlipFET package |
International Rectifier |
| 173 |
IRF6156 |
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET |
International Rectifier |
| 174 |
IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 175 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 176 |
IRF620 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 177 |
IRF620 |
5.0A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET |
Intersil |
| 178 |
IRF620 |
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 179 |
IRF620 |
N-Channel Power MOSFET |
Samsung Electronic |
| 180 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
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