No. |
Part Name |
Description |
Manufacturer |
151 |
1N3841 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
152 |
1N3842 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
153 |
1N3842 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
154 |
1N3843 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
155 |
1N3843 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
156 |
1N3844 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
157 |
1N3844 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
158 |
1N3845 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
159 |
1N3845 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
160 |
1N3846 |
4-LAYER DIODE THYRISTORS |
ITT Semiconductors |
161 |
1N3846 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
162 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
163 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
164 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
165 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
166 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
167 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
168 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
169 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
170 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
171 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
172 |
1N5522B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
173 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
174 |
1N5523B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
175 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
176 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
177 |
1N5525B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
178 |
1N5525B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
179 |
1N5526B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
180 |
1N5526B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
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