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Datasheets for ROELECTRO

Datasheets found :: 110343
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No. Part Name Description Manufacturer
151 1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
152 1011-175 High power Class C transistor SGS Thomson Microelectronics
153 1011-225 High power Class C transistor designed for L-Band Avionics applications SGS Thomson Microelectronics
154 1011-350 High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications SGS Thomson Microelectronics
155 102 0.5/2.5 GHz UHF LO BUFFER AMPLIFIER SGS Thomson Microelectronics
156 102 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS ST Microelectronics
157 103 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS SGS Thomson Microelectronics
158 103 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS ST Microelectronics
159 104 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS SGS Thomson Microelectronics
160 104 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS ST Microelectronics
161 10910 3 LINES EMI FILTER INCLUDING ESD PROTECTION ST Microelectronics
162 1132-5 450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications SGS Thomson Microelectronics
163 1134-5 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS SGS Thomson Microelectronics
164 1134-5 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS ST Microelectronics
165 1135-3 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS SGS Thomson Microelectronics
166 1135-3 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS ST Microelectronics
167 1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS SGS Thomson Microelectronics
168 1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS ST Microelectronics
169 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
170 13003BR NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Microelectronics
171 1334 STEPPER MOTOR CONTROLLERS ST Microelectronics
172 1394 IEEE 1394 SERIAL BUS CONTROLLER Fujitsu Microelectronics
173 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
174 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
175 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
176 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
177 1417-12 1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
178 1417-25 1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications SGS Thomson Microelectronics
179 145 PRODUCT/PROCESS CHANGE NOTIFICATION ST Microelectronics
180 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics


Datasheets found :: 110343
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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