No. |
Part Name |
Description |
Manufacturer |
151 |
1N4892 |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
152 |
1N4892A |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
153 |
1N4893 |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
154 |
1N4893A |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
155 |
1N4894 |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
156 |
1N4894A |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
157 |
1N4895 |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
158 |
1N4895A |
Ultra Stable Certified Voltage References 6.35V |
Transitron Electronic |
159 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
160 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
161 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
162 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
163 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
164 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
165 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
166 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
167 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
168 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
169 |
BZX84/C6V2 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.2V |
Siemens |
170 |
BZX84/C6V8 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.8V |
Siemens |
171 |
GMS34004TK |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version |
Hynix Semiconductor |
172 |
GMS34004TM |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version |
Hynix Semiconductor |
173 |
GMS34004TW |
4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version |
Hynix Semiconductor |
174 |
GMS34112TK |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
175 |
GMS34112TM |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V |
Hynix Semiconductor |
176 |
GMS34112TW |
4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V |
Hynix Semiconductor |
177 |
MJE16204 |
POWER TRANSISTORS 6.0 AMPERES 550 VOLTS-. VCES 45 AND 80 WATTS |
Motorola |
178 |
MMBV2101L |
Silicon voltage variable capacitance (EPICAP) diode, 30 Volts 6.8pF |
Motorola |
179 |
MMBV2101LT1-D |
Silicon Tuning Diodes 6.8 - 100 pF, 30 Volts Voltage Variable Capacitance Diodes |
ON Semiconductor |
180 |
MV2101 |
Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 6.8pF |
Motorola |
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