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Datasheets for S 6.

Datasheets found :: 278
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No. Part Name Description Manufacturer
151 1N4892 Ultra Stable Certified Voltage References 6.35V Transitron Electronic
152 1N4892A Ultra Stable Certified Voltage References 6.35V Transitron Electronic
153 1N4893 Ultra Stable Certified Voltage References 6.35V Transitron Electronic
154 1N4893A Ultra Stable Certified Voltage References 6.35V Transitron Electronic
155 1N4894 Ultra Stable Certified Voltage References 6.35V Transitron Electronic
156 1N4894A Ultra Stable Certified Voltage References 6.35V Transitron Electronic
157 1N4895 Ultra Stable Certified Voltage References 6.35V Transitron Electronic
158 1N4895A Ultra Stable Certified Voltage References 6.35V Transitron Electronic
159 1N821 TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
160 1N821A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
161 1N823 TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
162 1N823A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
163 1N825 TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
164 1N825A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
165 1N827 TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
166 1N827A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
167 1N829 TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
168 1N829A TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Motorola
169 BZX84/C6V2 Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.2V Siemens
170 BZX84/C6V8 Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.8V Siemens
171 GMS34004TK 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version Hynix Semiconductor
172 GMS34004TM 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version Hynix Semiconductor
173 GMS34004TW 4-bit single chip microcomputer. Program memory 512 bytes. Data memory 32 x 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version Hynix Semiconductor
174 GMS34112TK 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-500KHz at KHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
175 GMS34112TM 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 2.4MHz-4MHz at MHz version. Low operating voltage 2.2-4.5V Hynix Semiconductor
176 GMS34112TW 4-bit single chip microcomputer. Program memory 1.024 bytes. Data memory 32 x 4. I/O ports 4. Input ports 4. Output ports 6. Operating frequency 300KHz-4.2MHz at WIDE version. Normal operating voltage 4.0-5.0V Hynix Semiconductor
177 MJE16204 POWER TRANSISTORS 6.0 AMPERES 550 VOLTS-. VCES 45 AND 80 WATTS Motorola
178 MMBV2101L Silicon voltage variable capacitance (EPICAP) diode, 30 Volts 6.8pF Motorola
179 MMBV2101LT1-D Silicon Tuning Diodes 6.8 - 100 pF, 30 Volts Voltage Variable Capacitance Diodes ON Semiconductor
180 MV2101 Voltage-Variable Capacitance Silicon EPICAP Diode, 30 Volts 6.8pF Motorola


Datasheets found :: 278
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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