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Datasheets for S MEMOR

Datasheets found :: 1311
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 GE28F640L18T85 1.8V, 85ns, 64Mbit StrataFlash Wireless Memory Intel
152 GM76C88AL 65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS etc
153 GXB100473 Static ECL random access memory (RAM) 256 bits Siemens
154 GXB100475 Static ECL random access memory (RAM) 4096 bits Siemens
155 GXB10147A Static ECL random access memory (RAM) capacity 128 bits Siemens
156 GXB10415 Static ECL random access memory (RAM) 1024 bits Siemens
157 GYQ101 1024-bit read/write random access memory Mullard
158 HEF4720 256-bit, 1-bit per word random access memories Philips
159 HEF4720B 256-bit, 1-bit per word random access memories Philips
160 HEF4720BD 256-bit, 1-bit per word random access memories Philips
161 HEF4720BF 256-bit, 1-bit per word random access memories Philips
162 HEF4720BN 256-bit, 1-bit per word random access memories Philips
163 HEF4720BP 256-bit, 1-bit per word random access memories Philips
164 HEF4720BT 256-bit, 1-bit per word random access memories Philips
165 HEF4720V 256-bit, 1-bit per word random access memories Philips
166 HEF4720VD 256-bit, 1-bit per word random access memories Philips
167 HEF4720VF 256-bit, 1-bit per word random access memories Philips
168 HEF4720VN 256-bit, 1-bit per word random access memories Philips
169 HEF4720VP 256-bit, 1-bit per word random access memories Philips
170 HEF4720VT 256-bit, 1-bit per word random access memories Philips
171 HM10500-15 +0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers Hitachi Semiconductor
172 HM514260AJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
173 HM514260AJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
174 HM514260AJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
175 HM514260ALJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
176 HM514260ALJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
177 HM514260ALJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
178 HM514260ALRR-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
179 HM514260ALRR-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
180 HM514260ALRR-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor


Datasheets found :: 1311
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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