No. |
Part Name |
Description |
Manufacturer |
151 |
GE28F640L18T85 |
1.8V, 85ns, 64Mbit StrataFlash Wireless Memory |
Intel |
152 |
GM76C88AL |
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS |
etc |
153 |
GXB100473 |
Static ECL random access memory (RAM) 256 bits |
Siemens |
154 |
GXB100475 |
Static ECL random access memory (RAM) 4096 bits |
Siemens |
155 |
GXB10147A |
Static ECL random access memory (RAM) capacity 128 bits |
Siemens |
156 |
GXB10415 |
Static ECL random access memory (RAM) 1024 bits |
Siemens |
157 |
GYQ101 |
1024-bit read/write random access memory |
Mullard |
158 |
HEF4720 |
256-bit, 1-bit per word random access memories |
Philips |
159 |
HEF4720B |
256-bit, 1-bit per word random access memories |
Philips |
160 |
HEF4720BD |
256-bit, 1-bit per word random access memories |
Philips |
161 |
HEF4720BF |
256-bit, 1-bit per word random access memories |
Philips |
162 |
HEF4720BN |
256-bit, 1-bit per word random access memories |
Philips |
163 |
HEF4720BP |
256-bit, 1-bit per word random access memories |
Philips |
164 |
HEF4720BT |
256-bit, 1-bit per word random access memories |
Philips |
165 |
HEF4720V |
256-bit, 1-bit per word random access memories |
Philips |
166 |
HEF4720VD |
256-bit, 1-bit per word random access memories |
Philips |
167 |
HEF4720VF |
256-bit, 1-bit per word random access memories |
Philips |
168 |
HEF4720VN |
256-bit, 1-bit per word random access memories |
Philips |
169 |
HEF4720VP |
256-bit, 1-bit per word random access memories |
Philips |
170 |
HEF4720VT |
256-bit, 1-bit per word random access memories |
Philips |
171 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
172 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
173 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
174 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
175 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
176 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
177 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
178 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
179 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
180 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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