| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2SB798-T1 |
Silicon transistor |
NEC |
| 152 |
2SB798-T2 |
Silicon transistor |
NEC |
| 153 |
2SB799 |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 154 |
2SB799-T1 |
Silicon transistor |
NEC |
| 155 |
2SB799-T2 |
Silicon transistor |
NEC |
| 156 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 157 |
2SD757 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 158 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 159 |
2SD758 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB717 and 2SB718 |
Hitachi Semiconductor |
| 160 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 161 |
CSB772 |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 |
Continental Device India Limited |
| 162 |
CSB772E |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E |
Continental Device India Limited |
| 163 |
CSB772P |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P |
Continental Device India Limited |
| 164 |
CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q |
Continental Device India Limited |
| 165 |
CSB772R |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R |
Continental Device India Limited |
| 166 |
CSD794 |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 320 hFE. Complementary CSB744 |
Continental Device India Limited |
| 167 |
CSD794A |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 320 hFE. Complementary CSB744A |
Continental Device India Limited |
| 168 |
CSD794AO |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744AO |
Continental Device India Limited |
| 169 |
CSD794AR |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744AR |
Continental Device India Limited |
| 170 |
CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY |
Continental Device India Limited |
| 171 |
CSD794O |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O |
Continental Device India Limited |
| 172 |
CSD794R |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB744R |
Continental Device India Limited |
| 173 |
CSD794Y |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y |
Continental Device India Limited |
| 174 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 175 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 176 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 177 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 178 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 179 |
FMBM5401_SB74001 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 180 |
FSB70250 |
Motion SPM� 7 Series |
Fairchild Semiconductor |
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