| No. |
Part Name |
Description |
Manufacturer |
| 151 |
CSA1532B |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 70 - 140 hFE. Complementary CSC3930B |
Continental Device India Limited |
| 152 |
CSA1532C |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 110 - 220 hFE. Complementary CSC3930C |
Continental Device India Limited |
| 153 |
CSC3930 |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 70 - 220 hFE. Complementary CSA1532 |
Continental Device India Limited |
| 154 |
CSC3930B |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 70 - 140 hFE. Complementary CSA1532B |
Continental Device India Limited |
| 155 |
CSC3930C |
0.150W RF NPN Transistor. 20V Vceo, 30.000A Ic, 110 - 220 hFE. Complementary CSA1532C |
Continental Device India Limited |
| 156 |
CSC3936 |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 70 - 250 hFE. |
Continental Device India Limited |
| 157 |
CSC3936B |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 70 - 160 hFE. |
Continental Device India Limited |
| 158 |
CSC3936C |
0.150W RF NPN Transistor. 20V Vceo, 0.030A Ic, 110 - 250 hFE. |
Continental Device India Limited |
| 159 |
CSC3968 |
20.000W High Voltage NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 16 - 50 hFE. |
Continental Device India Limited |
| 160 |
CSC3968A |
20.000W High Voltage NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 16 - 34 hFE. |
Continental Device India Limited |
| 161 |
CSC3968B |
20.000W High Voltage NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 25 - 50 hFE. |
Continental Device India Limited |
| 162 |
ELJSC390JF |
Chip Inductors - Shielded Type |
Panasonic |
| 163 |
ELJSC390KF |
Chip Inductors - Shielded Type |
Panasonic |
| 164 |
HSC3953 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 165 |
HSC3953S |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 166 |
KSC3953 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 167 |
KSC3953CS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 168 |
KSC3953CSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 169 |
KSC3953DS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 170 |
KSC3953DSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 171 |
MSC3930-BT1 |
NPN RF Amplifier Transistor |
ON Semiconductor |
| 172 |
NX8570SC393-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. FC-PC connector. |
NEC |
| 173 |
NX8570SC393-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-PC connector. |
NEC |
| 174 |
NX8570SC393D-BA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). FC-PC connector. |
NEC |
| 175 |
NX8570SC393D-CA |
4 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). SC-PC connector. |
NEC |
| 176 |
NX8570SC393Q-BA |
8 x 50 GHz tunable CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). FC-PC connector. |
NEC |
| 177 |
NX8570SC397-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.766 nm. Frequency 194.70 THz. FC-PC connector. |
NEC |
| 178 |
NX8570SC397-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1539.766 nm. Frequency 194.70 THz. SC-PC connector. |
NEC |
| 179 |
NX8571SC393-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. FC-PC connector. |
NEC |
| 180 |
NX8571SC393-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1539.371 nm. Frequency 194.75 THz. SC-PC connector. |
NEC |
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