| No. |
Part Name |
Description |
Manufacturer |
| 151 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 152 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 153 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 154 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 155 |
12F629 |
8-Pin FLASH-Based 8-Bit CMOS Microcontrollers |
Microchip |
| 156 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 157 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| 158 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
| 159 |
12GC11 |
Silicon diffused junction rectifier 400V 12A |
TOSHIBA |
| 160 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 161 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
| 162 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 163 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
| 164 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 165 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 166 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 167 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 168 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 169 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 170 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 171 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 172 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 173 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 174 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 175 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 176 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 177 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 178 |
15CC11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 179 |
15CD11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 180 |
15FC11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| | | |
