| No. |
Part Name |
Description |
Manufacturer |
| 151 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 152 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 153 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 154 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 155 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 156 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 157 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 158 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 159 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 160 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 161 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 162 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 163 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 164 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 165 |
1M110ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 166 |
1M110ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 167 |
1M110ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 168 |
1M120ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 169 |
1M120ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 170 |
1M120ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 171 |
1M130ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 172 |
1M130ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 173 |
1M130ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 174 |
1M150ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 175 |
1M150ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 176 |
1M150ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 177 |
1M160ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 178 |
1M160ZS10 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 179 |
1M160ZS5 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 180 |
1M180ZS |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
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