No. |
Part Name |
Description |
Manufacturer |
151 |
1464 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
152 |
1466 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
153 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
154 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
155 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
156 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
157 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
158 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
159 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
160 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
161 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
162 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
163 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
164 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
165 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
166 |
15C02CH |
NPN EPITAXIAL SILICON TRANSISTOR |
SANYO |
167 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
168 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
169 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
170 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
171 |
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor |
GHz Technology |
172 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
173 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
174 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
175 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
176 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
177 |
180T2 |
NPN SILICON TRANSISTORS, DIFFUSED MESA |
Comset Semiconductors |
178 |
180T2 |
NPN Power Transistor triple diffused - Fast Switching |
SESCOSEM |
179 |
1815 |
NPN general purpose transistor |
Philips |
180 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
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