| No. |
Part Name |
Description |
Manufacturer |
| 151 |
TC551001CSR-70L |
131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
| 152 |
TC551001CSR-70L |
TC551001CP55 |
TOSHIBA |
| 153 |
TC551001CSR-85 |
131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
| 154 |
TC551001CSR-85 |
TC551001CP55 |
TOSHIBA |
| 155 |
TC551001CSR-85L |
TC551001CP55 |
TOSHIBA |
| 156 |
TC551001CSR-85L |
131,072 WORD x 8 BIT STATIC RAM |
TOSHIBA |
| 157 |
TC55V1001ASR-10 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 158 |
TC55V1001ASR-10L |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 159 |
TC55V1001ASR-85 |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 160 |
TC55V1001ASR-85L |
131,072-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
| 161 |
TC55V1001SR-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
| 162 |
TC55V1001SR-10L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
| 163 |
TC55V1001SR-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
| 164 |
TC55V1001SR-85L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
| 165 |
TC58V1001SR-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 166 |
TC58V1001SR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 167 |
TL5001PSR-M |
PWM Controller with Wide Input Range |
Texas Instruments |
| 168 |
TLC2274CNSR-A |
Quad Low-Noise Rail-To-Rail Operational Amplifier |
Texas Instruments |
| 169 |
TLC2274CNSR-A |
Quad Low-Noise Rail-To-Rail Operational Amplifier |
Texas Instruments |
| 170 |
TLC2274CNSR-A |
Quad Low-Noise Rail-To-Rail Operational Amplifier |
Texas Instruments |
| 171 |
TLC271PSR-M |
LinCMOS(TM) Programmable Low-Power Operational Amplifier |
Texas Instruments |
| 172 |
V23848-N15-C456 |
iSFP-Intelligent Small Form-factor Pluggable SONET OC-48 SR-1 / SDH STM I-16 Multirate Applications up to 2.67 Gbit/s |
Infineon |
| 173 |
V23848-N15-C56 |
iSFP-Intelligent Small Form-factor Pluggable SONET OC-48 SR-1 / SDH STM I-16 Multirate Applications up to 2.67 Gbit/s |
Infineon |
| 174 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
