| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5297 |
Field-effect current regulator diode |
Motorola |
| 152 |
1N5298 |
Field-effect current regulator diode |
Motorola |
| 153 |
1N5299 |
Field-effect current regulator diode |
Motorola |
| 154 |
1N5300 |
Field-effect current regulator diode |
Motorola |
| 155 |
1N5301 |
Field-effect current regulator diode |
Motorola |
| 156 |
1N5302 |
Field-effect current regulator diode |
Motorola |
| 157 |
1N5303 |
Field-effect current regulator diode |
Motorola |
| 158 |
1N5304 |
Field-effect current regulator diode |
Motorola |
| 159 |
1N5305 |
Field-effect current regulator diode |
Motorola |
| 160 |
1N5306 |
Field-effect current regulator diode |
Motorola |
| 161 |
1N5307 |
Field-effect current regulator diode |
Motorola |
| 162 |
1N5308 |
Field-effect current regulator diode |
Motorola |
| 163 |
1N5309 |
Field-effect current regulator diode |
Motorola |
| 164 |
1N5310 |
Field-effect current regulator diode |
Motorola |
| 165 |
1N5311 |
Field-effect current regulator diode |
Motorola |
| 166 |
1N5312 |
Field-effect current regulator diode |
Motorola |
| 167 |
1N5313 |
Field-effect current regulator diode |
Motorola |
| 168 |
1N5314 |
Field-effect current regulator diode |
Motorola |
| 169 |
1N5390 |
Hot Carrier Diode |
Motorola |
| 170 |
1N541 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 171 |
1N541 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 172 |
1N541 |
Tungsten point contact germanium diode - detection |
SESCOSEM |
| 173 |
1N542 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 174 |
1N542 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 175 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
| 176 |
1N54A |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 177 |
1N54A |
Germanium Point Contact Diode |
IPRS Baneasa |
| 178 |
1N54A |
Tungsten point contact germanium diode - general purpose |
SESCOSEM |
| 179 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 180 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
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