| No. |
Part Name |
Description |
Manufacturer |
| 151 |
MAX17681EVKITD |
Evaluation Kit for the MAX17681 Isolated +7V or +5V Output Configuration |
MAXIM - Dallas Semiconductor |
| 152 |
MAX17681EVKITD# |
Evaluation Kit for the MAX17681 Isolated +7V or +5V Output Configuration |
MAXIM - Dallas Semiconductor |
| 153 |
MAX17681EVKITE |
Evaluation Kit for MAX17681 Isolated ±15V and ±7.5V Output Configuration |
MAXIM - Dallas Semiconductor |
| 154 |
MAX17681EVKITE# |
Evaluation Kit for MAX17681 Isolated ±15V and ±7.5V Output Configuration |
MAXIM - Dallas Semiconductor |
| 155 |
MAX17681EVKITF |
Evaluation Kit for the MAX17681 Isolated +24V Output Configuration |
MAXIM - Dallas Semiconductor |
| 156 |
MAX17681EVKITF# |
Evaluation Kit for the MAX17681 Isolated +24V Output Configuration |
MAXIM - Dallas Semiconductor |
| 157 |
MDTXXA |
Circuit Configurations Available |
Infineon |
| 158 |
MID100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 159 |
MID145-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 160 |
MID150-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 161 |
MID200-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 162 |
MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 163 |
MID400-12E4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 164 |
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 165 |
MID550-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 166 |
MID75-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
| 167 |
Q62702-A1084 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
| 168 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 169 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
| 170 |
S93VP462P-2.7 |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
| 171 |
S93VP462P-A |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 172 |
S93VP462P-B |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 173 |
S93VP462S-2.7 |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
| 174 |
S93VP462S-A |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 175 |
S93VP462S-B |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 176 |
S93VP463P-2.7 |
1K-bit microwire memory, 16-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
| 177 |
S93VP463P-A |
1K-bit microwire memory, 16-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 178 |
S93VP463P-B |
1K-bit microwire memory, 16-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
| 179 |
S93VP463S-2.7 |
1K-bit microwire memory, 16-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
| 180 |
S93VP463S-A |
1K-bit microwire memory, 16-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
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