| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5458 |
Leaded JFET General Purpose |
Central Semiconductor |
| 152 |
2N5459 |
N-Channel JFET General Purpose Amplifier/Switch |
Calogic |
| 153 |
2N5459 |
Leaded JFET General Purpose |
Central Semiconductor |
| 154 |
2N5460 |
Leaded JFET General Purpose |
Central Semiconductor |
| 155 |
2N5461 |
Leaded JFET General Purpose |
Central Semiconductor |
| 156 |
2N5462 |
Leaded JFET General Purpose |
Central Semiconductor |
| 157 |
2N5484 |
Leaded JFET General Purpose |
Central Semiconductor |
| 158 |
2N5485 |
Leaded JFET General Purpose |
Central Semiconductor |
| 159 |
2N5486 |
Leaded JFET General Purpose |
Central Semiconductor |
| 160 |
2N5555 |
Leaded JFET General Purpose |
Central Semiconductor |
| 161 |
2N5902 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 162 |
2N5903 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 163 |
2N5904 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 164 |
2N5905 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 165 |
2N5906 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 166 |
2N5907 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 167 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 168 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
| 169 |
2N5949 |
Leaded JFET General Purpose |
Central Semiconductor |
| 170 |
2N5950 |
Leaded JFET General Purpose |
Central Semiconductor |
| 171 |
2N5951 |
Leaded JFET General Purpose |
Central Semiconductor |
| 172 |
2N5952 |
Leaded JFET General Purpose |
Central Semiconductor |
| 173 |
2N5953 |
Leaded JFET General Purpose |
Central Semiconductor |
| 174 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 175 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 176 |
2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT |
Panasonic |
| 177 |
2SD1944 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 178 |
2SD2114S |
20V,0.5A high-current gain medium power transistor |
ROHM |
| 179 |
2SD2144 |
High-current Gain MediumPower Transistor (20V/ 0.5A) |
ROHM |
| 180 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
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