| No. |
Part Name |
Description |
Manufacturer |
| 151 |
INT200 |
Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
Power Integrations Inc |
| 152 |
INT200PFI1 |
Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
Power Integrations Inc |
| 153 |
INT200PFI2 |
Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
Power Integrations Inc |
| 154 |
INT200TFI1 |
Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
Power Integrations Inc |
| 155 |
INT200TFI2 |
Low-side Drive and High-side Control with Simultaneous Conduction Lockout |
Power Integrations Inc |
| 156 |
IRG7T200CH12B |
1200V 200A Ultra Fast IGBT Chopper (High Side) module packaged in POWIR 62 package |
International Rectifier |
| 157 |
IRG7T200CL12B |
1200V 200A Ultra Fast IGBT Chopper (Low Side) module packaged in POWIR 62 package |
International Rectifier |
| 158 |
IRG7T200HF12B |
1200V 200A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package |
International Rectifier |
| 159 |
IST2001 |
6V; 50mA ISO -logic buffer schmitt trigger interrupter switch |
ISOCOM |
| 160 |
IST2002 |
6V; 50mA ISO -logic buffer schmitt trigger interrupter switch |
ISOCOM |
| 161 |
IST2003 |
6V; 50mA ISO -logic buffer schmitt trigger interrupter switch |
ISOCOM |
| 162 |
ITT2001 |
Silicon Switching Diode |
ITT Semiconductors |
| 163 |
ITT2002 |
Silicon Switching Diode |
ITT Semiconductors |
| 164 |
ITT2003 |
Silicon Switching Diode |
ITT Semiconductors |
| 165 |
K6T2008V(U)2A FAMILY |
256K x 8 bit Low Power and Low Voltage CMOS Static RAM Data Sheet |
Samsung Electronic |
| 166 |
K6T2008V(U)2M FAMILY |
256K x 8 bit Low Power and Low Voltage CMOS Static RAM Data sheet |
Samsung Electronic |
| 167 |
LET20015 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
SGS Thomson Microelectronics |
| 168 |
LET20015 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
ST Microelectronics |
| 169 |
LET20030C |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
SGS Thomson Microelectronics |
| 170 |
LET20030C |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
ST Microelectronics |
| 171 |
LET20030S |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
SGS Thomson Microelectronics |
| 172 |
LET20030S |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE |
ST Microelectronics |
| 173 |
LET20045C |
45W 28V 2GHz LDMOS TRANSISTOR |
ST Microelectronics |
| 174 |
LT2005-S |
Current Transducer LT 2005-S |
LEM |
| 175 |
MA4ST200 |
Low-Voltage / High Q Si Hyperabrupt Varactors |
Tyco Electronics |
| 176 |
MAX31091AUA/V+T200 |
Automotive Temperature Range Spread-Spectrum EconOscillator |
MAXIM - Dallas Semiconductor |
| 177 |
MBRT200100 |
High Power Schottky Rectifiers - Three Tower Modules |
America Semiconductor |
| 178 |
MBRT200100R |
High Power Schottky Rectifiers - Three Tower Modules |
America Semiconductor |
| 179 |
MBRT20020 |
High Power Schottky Rectifiers - Three Tower Modules |
America Semiconductor |
| 180 |
MBRT20020R |
High Power Schottky Rectifiers - Three Tower Modules |
America Semiconductor |
| | | |
