| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5254 |
500 mW silicon zener diode. Nominal zener voltage 27.0 V. |
Fairchild Semiconductor |
| 152 |
1N5254AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-10%. |
Microsemi |
| 153 |
1N5254B |
500 milliwatts glass silicon zener diode, zener voltage 27V |
Motorola |
| 154 |
1N5254BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-5%. |
Microsemi |
| 155 |
1N5254UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. |
Microsemi |
| 156 |
1N5255 |
500 mW silicon zener diode. Nominal zener voltage 28.0 V. |
Fairchild Semiconductor |
| 157 |
1N5255AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. Tolerance +-10%. |
Microsemi |
| 158 |
1N5255B |
500 milliwatts glass silicon zener diode, zener voltage 28V |
Motorola |
| 159 |
1N5255BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. Tolerance +-5%. |
Microsemi |
| 160 |
1N5255UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 28 V. |
Microsemi |
| 161 |
1N5281AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 200 V. Tolerance +-10%. |
Microsemi |
| 162 |
1N5281B |
500 milliwatts glass silicon zener diode, zener voltage 200V |
Motorola |
| 163 |
1N5281BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 200 V. Tolerance +-5%. |
Microsemi |
| 164 |
1N5281UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 200 V. |
Microsemi |
| 165 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
| 166 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
| 167 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
| 168 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 169 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 170 |
1N5541A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 171 |
1N5541B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 172 |
1N5542A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 173 |
1N5542B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 174 |
1N5543A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 175 |
1N5543B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 176 |
1N5544A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 177 |
1N5544B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 178 |
1N5614GP |
Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 200V |
Vishay |
| 179 |
1N5615GP |
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 200V |
Vishay |
| 180 |
1N5932 |
1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
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