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Datasheets for TAGE T

Datasheets found :: 2731
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No. Part Name Description Manufacturer
151 2N5550S High Voltage Transistor Korea Electronics (KEC)
152 2N5551 NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Boca Semiconductor Corporation
153 2N5551 High Voltage Transistor Korea Electronics (KEC)
154 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
155 2N5551 NPN high-voltage transistors Philips
156 2N5551C High Voltage Transistor Korea Electronics (KEC)
157 2N5551S High Voltage Transistor Korea Electronics (KEC)
158 2N5551SC High Voltage Transistor Korea Electronics (KEC)
159 2N6515 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
160 2N6515 High Voltage Transistor 625mW Micro Commercial Components
161 2N6515 High Voltage Transistors ON Semiconductor
162 2N6515 NPN Epitaxial Silicon High Voltage Transistor Samsung Electronic
163 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
164 2N6515-D High Voltage Transistors ON Semiconductor
165 2N6515RLRM High Voltage Transistors ON Semiconductor
166 2N6516 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
167 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
168 2N6517 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
169 2N6517 High Voltage Transistor 625mW Micro Commercial Components
170 2N6517 High Voltage Transistors ON Semiconductor
171 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
172 2N6517RLRA High Voltage Transistors ON Semiconductor
173 2N6517RLRP High Voltage Transistors ON Semiconductor
174 2N6518 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
175 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
176 2N6519 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
177 2N6519 High Voltage Transistor 625mW Micro Commercial Components
178 2N6519 High Voltage Transistors ON Semiconductor
179 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
180 2N6519RLRA High Voltage Transistors ON Semiconductor


Datasheets found :: 2731
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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