| No. |
Part Name |
Description |
Manufacturer |
| 151 |
IPU07N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 6.8mOhm, 30A, LL |
Infineon |
| 152 |
IPU09N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 8.8mOhm, 50A, LL |
Infineon |
| 153 |
IPU12N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL |
Infineon |
| 154 |
IPU13N03LA |
Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 25V, TO251, RDSon = 13.0mOhm, 30A, LL |
Infineon |
| 155 |
IPU14N03L |
OptiMOS Power MOSFET, 30V, TO251, RDSon = 14.4mOhm, 30A, LL |
Infineon |
| 156 |
IRAC1168-TO220 |
Daughterboard for IR1168 and TO-220 MOSFETs |
International Rectifier |
| 157 |
IRAC11682-TO220 |
Daughterboard for IR11682 and TO-220 MOSFETs |
International Rectifier |
| 158 |
IRAC1169-TO220 |
Daughterboard for IR1169 and TO-220 MOSFETs |
International Rectifier |
| 159 |
IRF630 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 160 |
IRF630 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 161 |
IRF630FP |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 162 |
IRF630FP |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 163 |
IRF630ST4 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 164 |
IRFY330 |
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
SemeLAB |
| 165 |
IRGPS46160D |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
| 166 |
IRGPS46160DPBF |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
| 167 |
IRGPS66160D |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
| 168 |
IRGPS66160DPBF |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
| 169 |
ISL9R18120S3ST |
18A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE |
Fairchild Semiconductor |
| 170 |
ISL9R30120G2_NL |
30A, 1200V STEALTH DIODE, TO247 PACKAGE |
Fairchild Semiconductor |
| 171 |
ISL9R8120P2_NL |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE |
Fairchild Semiconductor |
| 172 |
ISL9R8120S3ST |
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE |
Fairchild Semiconductor |
| 173 |
MPE-29G |
Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package |
Sanken |
| 174 |
NT100N10 |
123A, 100V, 9 mohm, TO264 |
ON Semiconductor |
| 175 |
NTB27N06 |
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK |
ON Semiconductor |
| 176 |
NTB27N06T4 |
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK |
ON Semiconductor |
| 177 |
NTE5620 |
TRIAC 800VRM, 8A, TO220 Full Pack |
NTE Electronics |
| 178 |
NTE5671 |
TRIAC 800VRM, 20A TO220 (Isolated) |
NTE Electronics |
| 179 |
NTE5699 |
TRIAC - 800VRM, 25A TO220 Full Pack |
NTE Electronics |
| 180 |
NTY100N10 |
Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package |
ON Semiconductor |
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