| No. |
Part Name |
Description |
Manufacturer |
| 151 |
JQ1A-6V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 152 |
JQ1A-9V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 153 |
JQ1AAP-18V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 154 |
JQ1AP-12V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 155 |
JQ1AP-24V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 156 |
JQ1AP-6V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 157 |
JQ1AP-9V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 158 |
JQ1P-12V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 159 |
JQ1P-18V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 160 |
JQ1P-24V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 161 |
JQ1P-48V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 162 |
JQ1P-5V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 163 |
JQ1P-6V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 164 |
JQ1P-9V |
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY |
Matsushita Electric Works(Nais) |
| 165 |
KT205 |
Symmetrical Multilayer Switching Device Triac |
Tesla Elektronicke |
| 166 |
KT830L11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 167 |
KT830L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 168 |
KT830L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 169 |
KT830L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells . Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 170 |
KT830W11 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 171 |
KT830W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 172 |
KT830W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 173 |
KT830W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 174 |
KT831L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 175 |
KT831L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 176 |
KT831L55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 177 |
KT831W15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 178 |
KT831W51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 179 |
KT831W55 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 180 |
KT832L15 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
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