| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N5179 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 152 |
2N5179 |
VHF/UHF AMPLIFIER |
ST Microelectronics |
| 153 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 154 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 155 |
2N5484 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 156 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 157 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 158 |
2N5486 |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 159 |
2N5486-D |
JFET VHF/UHF Amplifiers N-Channel - Depletion |
ON Semiconductor |
| 160 |
2N5486RLRP |
JFET VHF/UHF Amplifiers |
ON Semiconductor |
| 161 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 162 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 163 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 164 |
2N5644 |
NPN silicon RF UHF power transistor, 1W Output power, designed for 12.5V |
Motorola |
| 165 |
2N5646 |
NPN silicon RF power UHF transistor 12W, specified 12.5V 470MHz characteristics |
Motorola |
| 166 |
2N5829 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 167 |
2N5835 |
RF NPN transistor for UHF amplifier |
IPRS Baneasa |
| 168 |
2N5835 |
UHF Silicon NPN Transistor |
IPRS Baneasa |
| 169 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 170 |
2N5836 |
UHF Silicon NPN Transistor |
IPRS Baneasa |
| 171 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 172 |
2N5837 |
UHF Silicon NPN Transistor |
IPRS Baneasa |
| 173 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 174 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
| 175 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 176 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 177 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 178 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
| 179 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
| 180 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
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