| No. |
Part Name |
Description |
Manufacturer |
| 151 |
ACY41 |
Germanium Transistor |
Mullard |
| 152 |
ACY44 |
Germanium P-N-P medium power transistor |
Mullard |
| 153 |
ACY44 |
Germanium Transistor |
Mullard |
| 154 |
AD149 |
Germanium P-N-P high power transistor |
Mullard |
| 155 |
AD149 |
Germanium P-N-P LF Power Transistor |
Mullard |
| 156 |
AD161 |
Germanium N-P-N high power transistor |
Mullard |
| 157 |
AD161 |
Complementary germanium power transistors AD161/AD162 |
Mullard |
| 158 |
AD161 |
Germanium A.F. Power Transistor |
Mullard |
| 159 |
AD162 |
Germanium P-N-P high power transistor |
Mullard |
| 160 |
AD162 |
Germanium A.F. Power Transistor |
Mullard |
| 161 |
AD162 |
Complementary germanium power transistors AD161/AD162 |
Mullard |
| 162 |
ADY26 |
Germanium Transistor |
Mullard |
| 163 |
ADZ11 |
Germanium Transistor |
Mullard |
| 164 |
ADZ12 |
Germanium Transistor |
Mullard |
| 165 |
AEY13 |
Low noise microwave amplifier in S band diode |
Mullard |
| 166 |
AEY15 |
Low noise microwave amplifier in S band diode |
Mullard |
| 167 |
AEY16 |
Low noise microwave amplifier in S band diode |
Mullard |
| 168 |
AEY17 |
Germanium bonded backward diode for use at X band |
Mullard |
| 169 |
AEY29 |
Germanium bonded backward diode for use at J band |
Mullard |
| 170 |
AEY31 |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 171 |
AEY31A |
Subminiature germanium bonded backward diodes for use up to J band |
Mullard |
| 172 |
AF114 |
Germanium Transistor |
Mullard |
| 173 |
AF115 |
Germanium Transistor |
Mullard |
| 174 |
AF116 |
Germanium Transistor |
Mullard |
| 175 |
AF117 |
Germanium Transistor |
Mullard |
| 176 |
ASY26 |
Germanium P-N-P low power transistor |
Mullard |
| 177 |
ASY26 |
Germanium Transistor |
Mullard |
| 178 |
ASY27 |
Germanium P-N-P low power transistor |
Mullard |
| 179 |
ASY27 |
Germanium Transistor |
Mullard |
| 180 |
ASY28 |
Germanium N-P-N low power transistor |
Mullard |
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