No. |
Part Name |
Description |
Manufacturer |
151 |
C2012X5R0J226 |
Up to 500 mA, High Efficiency Synchronous Step-Down DC-DC Converter |
ON Semiconductor |
152 |
CLS4D11 |
Up to 500 mA, High Efficiency Synchronous Step-Down DC-DC Converter |
ON Semiconductor |
153 |
CXK77B1810AGB |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
154 |
CXK77B1810AGB-5 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
155 |
CXK77B1810AGB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
156 |
CXK77B3610GB |
-High Speed Bi-CMOS Synchronous Static RAM |
SONY |
157 |
CXK77B3610GB |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
158 |
CXK77B3610GB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
159 |
CXK77B3610GB-7 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
160 |
CXK77B3611AGB |
-High Speed Bi-CMOS Synchronous Static RAM |
SONY |
161 |
CXK77B3611AGB |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
162 |
CXK77B3611AGB-5 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
163 |
CXK77B3611AGB-6 |
High Speed Bi-CMOS Synchronous Static RAM |
SONY |
164 |
CXK77V3211Q |
32768-word by 32-bit High Speed Synchronous Static RAM |
SONY |
165 |
CXK77V3211Q-12 |
32768-word by 32-bit High Speed Synchronous Static |
SONY |
166 |
CXK77V3211Q-14 |
32768-word by 32-bit High Speed Synchronous Static |
SONY |
167 |
DPA02257RGBR |
Low Input Voltage, 6A Synchronous Step-Down SWIFT? Converter for DDR Memory Termination 20-VQFN -40 to 85 |
Texas Instruments |
168 |
EDI20180C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
169 |
EDI20181C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
170 |
EDI20182C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
171 |
EDI20183C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
172 |
EDI20184C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
173 |
EDI20185C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
174 |
EDI2040C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
175 |
EDI2041C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
176 |
EDI2042C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
177 |
EDI2043C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
178 |
EDI2044C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
179 |
EDI2045C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
180 |
EDI28160C |
+ 5V (+/-10%),16K x 16 monolithic high speed synchronous static RAM |
White Electronic Designs |
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