| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N7002PW |
60 V, 310 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 152 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 153 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 154 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
| 155 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 156 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 157 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
| 158 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
| 159 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 160 |
2SC6097 |
Bipolar Transistor, 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA |
ON Semiconductor |
| 161 |
2SD1620 |
NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications |
SANYO |
| 162 |
2SD879 |
NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications |
SANYO |
| 163 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
| 164 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 165 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 166 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 167 |
2SK3703 |
N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG |
ON Semiconductor |
| 168 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 169 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 170 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 171 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 172 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 173 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 174 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 175 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
| 176 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 177 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
| 178 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 179 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 180 |
3EZ120 |
120 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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