No. |
Part Name |
Description |
Manufacturer |
151 |
CDBD1560C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Common cathod. |
Comchip Technology |
152 |
FFM101 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. |
Rectron Semiconductor |
153 |
FFM102 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 100V, maxVRMS = 70V, maxVDC = 100V. Current 1.0A. |
Rectron Semiconductor |
154 |
FFM103 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A. |
Rectron Semiconductor |
155 |
FFM104 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 400V, maxVRMS = 280V, maxVDC = 400V. Current 1.0A. |
Rectron Semiconductor |
156 |
FFM105 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A. |
Rectron Semiconductor |
157 |
FFM106 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A. |
Rectron Semiconductor |
158 |
FFM107 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A. |
Rectron Semiconductor |
159 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
160 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
161 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
162 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
163 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
164 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
165 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
166 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
167 |
IRF150 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
168 |
IRF151 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. |
General Electric Solid State |
169 |
IRF152 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
170 |
IRF153 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. |
General Electric Solid State |
171 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
172 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
173 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
174 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
175 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
176 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
177 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
178 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
179 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
180 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
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