DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for V. C

Datasheets found :: 289
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 CDBD1560C 15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 60 V. Common cathod. Comchip Technology
152 FFM101 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 50V, maxVRMS = 35V, maxVDC = 50V. Current 1.0A. Rectron Semiconductor
153 FFM102 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 100V, maxVRMS = 70V, maxVDC = 100V. Current 1.0A. Rectron Semiconductor
154 FFM103 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 200V, maxVRMS = 140V, maxVDC = 200V. Current 1.0A. Rectron Semiconductor
155 FFM104 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 400V, maxVRMS = 280V, maxVDC = 400V. Current 1.0A. Rectron Semiconductor
156 FFM105 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 600V, maxVRMS = 420V, maxVDC = 600V. Current 1.0A. Rectron Semiconductor
157 FFM106 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 800V, maxVRMS = 560V, maxVDC = 800V. Current 1.0A. Rectron Semiconductor
158 FFM107 Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A. Rectron Semiconductor
159 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
160 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
161 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
162 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
163 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
164 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
165 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
166 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
167 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
168 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
169 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
170 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
171 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
172 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
173 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
174 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
175 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
176 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
177 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
178 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
179 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
180 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State


Datasheets found :: 289
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com