| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1.5SMC200 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 200V. 1500W peak power, 5.0W steady state. |
Motorola |
| 152 |
1.5SMC200A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 200V. 1500W peak power, 5.0W steady state. |
Motorola |
| 153 |
15040-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE Electronics |
| 154 |
15041-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 90VDC |
NTE Electronics |
| 155 |
15042-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 110VDC |
NTE Electronics |
| 156 |
15043-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 145VDC |
NTE Electronics |
| 157 |
15044-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 230VDC |
NTE Electronics |
| 158 |
15045-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 300VDC |
NTE Electronics |
| 159 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
| 160 |
15047-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 470VDC |
NTE Electronics |
| 161 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
| 162 |
15049AC |
Surge arrester (gas filled). Nominal breakdown voltage 120VAC. |
NTE Electronics |
| 163 |
15050AC |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. |
NTE Electronics |
| 164 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 165 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 166 |
152911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 167 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 168 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 169 |
1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W |
Shanghai Sunrise Electronics |
| 170 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 171 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 172 |
2436 |
COUNT DOWN POWER TIMER |
Allegro MicroSystems |
| 173 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 174 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 175 |
2SC3795 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 176 |
2SC3795A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 177 |
2SC3872 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 178 |
2SC3970 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 179 |
2SC3970A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
| 180 |
2SC3971 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
Panasonic |
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