| No. |
Part Name |
Description |
Manufacturer |
| 151 |
EFT342 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 152 |
EFT343 |
TRANSISTOR Ge-ALLOY-pnp |
IPRS Baneasa |
| 153 |
EFT343 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 154 |
EFT367 |
Ge-ALLOY-pnp TRANSISTOR |
IPRS Baneasa |
| 155 |
EFT38S |
Ge-ALLOY-pnp TRANSISTOR designed for use in electronic computers |
IPRS Baneasa |
| 156 |
EVALSTPM3X-3PH |
Poly-phase energy metering demonstration board with current transformers based on the STPM33, STPM34 and STM8S903 |
ST Microelectronics |
| 157 |
FAN53523 |
Digitally-Programmable 3MHz, USB-Compliant Power Management Subsystem |
Fairchild Semiconductor |
| 158 |
HYB18L128160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 159 |
HYB18L128160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 160 |
HYB18L256160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 161 |
HYB18L256160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 162 |
HYB25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 163 |
HYE18L256160BC-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 164 |
HYE18L256160BF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 165 |
HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
| 166 |
IRFY044 |
60V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 167 |
IRFY130 |
100V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 168 |
IRFY140 |
100V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 169 |
IRFY240 |
200V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 170 |
IRFY340 |
400V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 171 |
IRFY430 |
500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 172 |
IRFY440 |
500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 173 |
IRFY9240 |
-200V Single P-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package |
International Rectifier |
| 174 |
LH0084 |
Digitally-Programmable-Gain Instrumentation Amplifier |
National Semiconductor |
| 175 |
LH0084C |
Digitally-Programmable-Gain Instrumentation Amplifier |
National Semiconductor |
| 176 |
LH0084CD |
Digitally-Programmable-Gain Instrumentation Amplifier |
National Semiconductor |
| 177 |
LH0084D |
Digitally-Programmable-Gain Instrumentation Amplifier |
National Semiconductor |
| 178 |
LH0086CD |
+/-18 V, digitally-programmable-gain amplifier |
National Semiconductor |
| 179 |
LH0086D |
+/-18 V, digitally-programmable-gain amplifier |
National Semiconductor |
| 180 |
LM0084 |
DIGITALLY-PROGRAMMABLE-GAIN INSTRUMENTATION AMPLIFIER |
National Semiconductor |
| | | |
